June 14, 2003

Nanotech breakthrough jogs memory

ZDnet.com:

The first 10GB nanotechnology memory (NRAM) device has been built in the laboratories of Nantero, the Boston, Massachussetts company has said.

Using carbon nanotubes a billionth of a meter in diameter sprinkled onto a silicon wafer, the device has been made using mostly standard chip production techniques. The company claims that the technology can combine the speed and price of dynamic memory with the non-volatility of flash, making it a strong candidate for the eagerly awaited universal memory devices that the industry hopes will replace all other types.

If commercialized at a suitable price, it could replace DRAM, flash memory and hard disks in a wide variety of digital devices including PCs, phones and MP3 players.

See related article.

Posted by Bob King at June 14, 2003 05:33 PM | TrackBack
Related Categories: Area - Tech - Nanotechnology | Area - Tech - Semiconductors | Quadrant - Technological



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